MURH7040

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 400 V to 600 V VRRM Not ESD Sensitive MURH7040 thru MURH7060R VRRM = 400 V - 600 V IF(AV) = 70 A D-67 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURH7040(R) MURH7060(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 400 280 400 -55 to 150 -55 to 150 600 420 600 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURH7040(R) MURH7060(R) Average forward current (per pkg) Peak forward surge current Maximum instantaneous forward voltage Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Thermal characteristics Maximum thermal resistance, junction - case IF(AV) IFSM VF IR Trr RΘJC TC = 125 °C tp = 8.3 ms, half ...