MBR30080CTR Datasheet (data sheet) PDF





MBR30080CTR Datasheet, Silicon Power Schottky Diode

MBR30080CTR   MBR30080CTR  

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Silicon Power Schottky Diode Features High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitiv e MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 ° C, unless otherwise specified ("R" devi ces have leads reversed) Parameter Sy mbol Conditions MBR30045CT(R) MBR3006 0CT(R) MBR30080CT(R) MBR300100CT(R) Uni t Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Ope rating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -5 5 to 150 80 57 80 -55 to 150 -55 to 15 0 100 70 100 -55 to 150 -55 to

MBR30080CTR Datasheet, Silicon Power Schottky Diode

MBR30080CTR  
150 V V V °C °C Electrical character istics, at Tj = 25 °C, unless otherwis e specified Parameter Symbol Conditi ons MBR30045CT(R) MBR30060CT(R) MBR300 80CT(R) MBR300100CT(R) Unit Average fo rward current (per pkg) Peak forward su rge current (per leg) IF(AV) IFSM TC = 125 °C tp = 8.3 ms, half sine Maxim um forward voltage (per leg)








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