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MURT40005R Dataheets PDF



Part Number MURT40005R
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Super Fast Recovery Diode
Datasheet MURT40005R DatasheetMURT40005R Datasheet (PDF)

Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Isolation Type Package • Electrically Isolated base plate • Not ESD Sensitive MURT40005 thru MURT40020R VRRM = 50 V - 200 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT40005(R) MURT40010(R) MURT40020(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking vol.

  MURT40005R   MURT40005R


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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Isolation Type Package • Electrically Isolated base plate • Not ESD Sensitive MURT40005 thru MURT40020R VRRM = 50 V - 200 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT40005(R) MURT40010(R) MURT40020(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 71 100 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURT40005(R) Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage.


MURT40020 MURT40005R MURT40010R


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