MSRT20080D

Silicon Standard Recovery Diode Features High Surge Capability Types from 600 V to 1000 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive MSRT20060(A)D thru MSRT200100(A)D VRRM = 600 V - 1000 V IF(AV) = 200 A Three Tower Package MSRT200XXAD MSRT200XXADR MSRT200XXD Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 800 566 800 -55 to 150 -55 to 150 1000 707 1000 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit Average forward current (per leg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum...