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MURT30005R

GeneSiC

Silicon Super Fast Recovery Diode

Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Isolation Type Pack...


GeneSiC

MURT30005R

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Description
Silicon Super Fast Recovery Diode Features High Surge Capability Types from 50 V to 200 V VRRM Isolation Type Package Electrically Isolated base plate Not ESD Sensitive MURT30005 thru MURT30020R VRRM = 50 V - 200 V IF(AV) = 300 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT30005(R) MURT30010(R) MURT30020(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 71 100 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURT30005(R) Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage...




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