(Datasheet) MBR20030CT data sheet PDF





MBR20030CT Datasheet, Silicon Power Schottky Diode

MBR20030CT   MBR20030CT  

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Silicon Power Schottky Diode Features High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Packa ge Maximum ratings, at Tj = 25 °C, un less otherwise specified ("R" devices h ave leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R ) MBR20035CT(R) MBR20040CT(R) Unit

MBR20030CT Datasheet, Silicon Power Schottky Diode

MBR20030CT  
Repetitive peak reverse voltage RMS rev erse voltage DC blocking voltage Operat ing temperature Storage temperature VR RM VRMS VDC Tj Tstg 20 14 20 -55 to 15 0 -55 to 150 30 21 30 -55 to 150 -55 t o 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions








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