Silicon Power Schottky Diode
Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive
MBR20020...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 20 to 40 V VRRM Not ESD Sensitive
MBR20020CT thru MBR20040CTR
VRRM = 20 V - 40 V IF(AV) = 200 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
20
14 20 -55 to 150 -55 to 150
30
21 30 -55 to 150 -55 to 150
35
25 35 -55 to 150 -55 to 150
40
28 40 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
IF(AV) IFSM
TC = 125 °C tp = 8.3 ms, half sine
Maximum forward voltage (per leg)
VF
Rever...
