MBR20040CT Datasheet (data sheet) PDF





MBR20040CT Datasheet, Silicon Power Schottky Diode

MBR20040CT   MBR20040CT  

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Silicon Power Schottky Diode Features High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Packa ge Maximum ratings, at Tj = 25 °C, un less otherwise specified ("R" devices h ave leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R ) MBR20035CT(R) MBR20040CT(R) Unit Rep etitive peak reverse voltage RMS revers e voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 - 55 to 150 30 21 30 -55 to 150 -55 to 1 50 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V

MBR20040CT Datasheet, Silicon Power Schottky Diode

MBR20040CT  
V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specif ied Parameter Symbol Conditions MBR 20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Average forward cur rent (per pkg) Peak forward surge curre nt (per leg) IF(AV) IFSM TC = 125 °C tp = 8.3 ms, half sine Maximum forwar d voltage (per leg) VF Rever








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