Silicon Power Schottky Diode
Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive
MBRH...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 150 V to 200 V VRRM Not ESD Sensitive
MBRH240150 thru MBRH240200R
VRRM = 150 V - 200 V IF(AV) = 240 A
D-67 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH240150(R)
MBRH240200(R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
150
106 150 -55 to 150 -55 to 150
200
141 150 -55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH240150(R)
Average forward current (per pkg)
IF(AV)
TC = 125 °C
240
Peak forward surge current IFSM tp = 8.3 ms, half sine
3300
Maximum instantaneous forward voltage
Maximum instantaneous reverse current at rated DC blocking voltage
Thermal characteristics Thermal resistance, junctioncase
VF IR
RΘJC
IFM = 240 A, Tj = ...
