MUR40040CTR

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 400 to 600 V VRRM Not ESD Sensitive MUR40040CT thru MUR40060CTR VRRM = 400 V - 600 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT(R) MUR40060CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 400 280 400 -55 to 150 -55 to 150 600 420 600 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR40040CT(R) MUR40060CT(R) Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum reverse current at rated DC blocking voltage (per leg) Maximum reverse recovery time (per leg) Thermal characteristics Maximum thermal resistance, junction - case (per...