Silicon Power Schottky Diode
Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive
MBR3...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 150 V to 200 V VRRM Not ESD Sensitive
MBR300150CT thru MBR300200CTR
VRRM = 150 V - 200 V IF(AV) = 300 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR300150CT(R)
MBR300200CT(R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
150
106 150 -55 to 150 -55 to 150
200
141 200 -55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR300150CT(R)
Average forward current (per pkg)
Peak forward surge current (per leg)
IF(AV) IFSM
Maximum forward voltage (per leg)
VF
Reverse current at rated DC blocking voltage (per leg)
IR
Thermal characteristics
Thermal resistance, junction-case (per leg)
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 150 ...
