Document
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HC-90R
I 1200AC ································································ V 4500VCES ·························································· 1-element in a pack Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
November 2012 HVM-1057-E
1
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
VCES
Collector-emitter voltage
VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg tpsc
Gate-emitter voltage Collector c.