30C01SS

Ordering number : ENN7523 30C01SS NPN Epitaxial Planar Silicon Transistor 30C01SS Low-Frequency General-Purpose Amplifier Applications Applications Low-frequency Amplifier, muting circuit. Package Dimensions unit : mm 2159A Features Large current capacitance. Low collector-to-emitter saturation voltage(resistance). RCE(sat) typ=0.70Ω[IC=0.4A, IB=20mA]. Ultrasmall and thin flat lead package (1.4mm!0.8mm!0.6mm). Small ON-resistance (Ron). Top View 1.4 0.25 3 12 0.45 0.2 0.3 0.8 0.3 1.4 [30C01SS] Side View 0.1 Bottom View 0.07 0.07 Specifications Absolute Maximum Ratings at Ta=25°C Side View 0.6 3 21 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a glass ...