30C02SS

Ordering number : ENN7367 30C02SS NPN Epitaxial Planar Silicon Transistor 30C02SS Low-Frequency General-Purpose Amplifier Applications Applications Low-frequency Amplifier, high-speed switching, small motor drive. Package Dimensions unit : mm 2159A Features Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.25 3 12 0.45 0.2 0.3 0.8 0.3 1.4 [30C02SS] Side View 0.1 Bottom View 0.07 0.07 Specifications Absolute Maximum Ratings at Ta=25°C Side View 0.6 3 21 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C ...