CMPA5259025F
25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers
Cree’s CMPA5259025F is a gallium nitride ...
CMPA5259025F
25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers
Cree’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The
transistor is supplied in a ceramic/metal flange package.
PacPkNa:geCMTyPpAe5:245490022159F
Typical Performance Over 5.2-5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.5 GHz
5.9 GHz
Small Signal Gain
33.6
31.9
32.2
Output Power
38.5
39.6
34.8
Efficiency
53.5
51.3
47.2
Input Return Loss
-13.5
-15.5
-4.8
Note: 100 μsec Pulse Width, 10% Duty Cycle, PIN= 22 dBm
Units dB W % dB
Features
30 dB Small Signal Gain 50% Efficiency at PSAT Operation up to 28 V High Breakdown Voltage
Applications Radar
Rev 0.1 – January 2019
Subject to ch...
