GTVA123501FA

GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 – 1400 MHz Description The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA 300 μs pulse width, 10% duty cycle 22 21 20 19 18 17 16 15 0 80 70 60 50 40 Gain: 1200 MHz Gain: 1300 MHz 30 Gain: 1400 MHz Eff: 1200 MHz 20 Eff: 1300 MHz Eff: 1400 MHz g123501fa_gr300-1 10 0 50 100 150 200 250 300 350 400 450 Output Power (W) GTVA123501FA Package H-37265J-2 Features GaN on SiC HEMT technology Input matched Typical pulsed CW performance: pulse width = 300 μs, duty cycle = 10%, 1200 - 1400 MHz, VDS = 50 V, IDQ = 100 mA - Output power = 350 W min @ P3dB - Drain Efficiency = 70 % - Gain = 18 dB Human Body Model Class 1B (...