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PTFB201402FC Dataheets PDF



Part Number PTFB201402FC
Manufacturers Wolfspeed
Logo Wolfspeed
Description High Power RF LDMOS Field Effect Transistor
Datasheet PTFB201402FC DatasheetPTFB201402FC Datasheet (PDF)

PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB201402FC Package H-37248-4 Power Gain (dB) Input Return Loss (dB) Smal.

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PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB201402FC Package H-37248-4 Power Gain (dB) Input Return Loss (dB) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 650 mA 21.0 20.5 20.0 19.5 19.0 18.5 18.0 17.5 17.0 16.5 16.0 1800 Gain IRL 1900 2000 2100 Frequency (MHz) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 2200 Features • Broadband internal matching • Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56% • Integrated ESD protection • Excellent thermal stability • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s.


GTVA123501FA PTFB201402FC PA343


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