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1N4935G Dataheets PDF



Part Number 1N4935G
Manufacturers Diodes
Logo Diodes
Description 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
Datasheet 1N4935G Datasheet1N4935G Datasheet (PDF)

Features • Glass Passivated Die Construction • Diffused Junction • Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 30A Peak • Lead Free Finish, RoHS Compliant (Note 4) 1N4933G - 1N4937G 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Mechanical Data • Case: DO-41 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish - Bright Tin. Plated Le.

  1N4935G   1N4935G



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Features • Glass Passivated Die Construction • Diffused Junction • Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 30A Peak • Lead Free Finish, RoHS Compliant (Note 4) 1N4933G - 1N4937G 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Mechanical Data • Case: DO-41 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 • Polarity: Cathode Band • Ordering Information: See Page 3 • Marking: Type Number • Weight: 0.35 grams (approximate) DO-41 Dim Min Max A 25.40 ⎯ B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol VRRM VRWM VR VR(RMS) @TA = 25°C unless otherwise specified 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G 50 100 200 400 600 35 70 140 280 420 Unit V V Average Rectified Output Current (Note 1) @ TA = 75°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 30 A Forward Voltage @ IF = 1.0A Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 100°C Reverse Recovery Time (Note 3) VFM IRM trr 1.2 V 5.0 100 μA 200 ns Typical Junction Capacitance (Note 2) Cj 15 pF Typical Thermal Resistance Junction to Ambient RθJA 100 K/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Notes: 1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Measured with IF 0.5A, IR = 1.0A, Irr = 0.25A. 4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes. DS27002 Rev. 7 - 2 1 of 3 www.diodes.com 1N4933G - 1N4937G © Diodes Incorporated I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A) 1.0 0.8 0.6 0.4 0.2 PC Board Mounted 9.5mm Lead Lengths 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curves 30 200 20 10 0 1.0 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Current CT, TOTAL CAPACITANCE (pF) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 1.0 0.1 0.01 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 F=1mHz 10 1.0 1.0 10 VR, DC REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance 100 IFSM, PEAK FORWARD SURGE CURRENT (A) DS27002 Rev. 7 - 2 2 of 3 www.diodes.com 1N4933G - 1N4937G © Diodes Incorporated Ordering Information (Note 5) Notes: Device 1N4933G-T 1N4934G-T 1N4935G-T 1N4936G-T 1N4937G-T Packaging DO-41 DO-41 DO-41 DO-41 DO-41 5. For packaging de.


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