A1374

2SA1374 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 12 3 1. Emitter 2. Collector 3. Base 2SA1374 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –55 –55 –5 –100 –30 300 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to base breakdown voltage V(BR)CBO –55 — Collector to emitter breakdown V(BR)CEO voltage –55 — Emitter to base breakdown voltage V(BR)EBO –5 — Collector cutoff current ICBO — — Emitter cutoff current IEBO — — DC current transfer ratio hFE*1 160 — Base to emitter voltage VBE — –0.66 Collector to emitter saturation VCE(sat) voltage — –0.1 Gain bandwidth product fT — 250 Collector output capacitance Cob — 2.5 Note: 1. The 2SA1374 is grouped by hFE as follows. CD 160 to 320 250 to 500 Max — — — –0.1 –0.05 500 –0.75 –0.5 — — Unit V V V µA µA V V MHz pF Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –10 V, IE = 0, f = 1 MHz See characteristic curves of 2SA836. 2 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 50 1...