High-voltage switching diode
BAS21GW
High-voltage switching diode
15 June 2017
Product data sheet
1. General description
High-voltage switching dio...
Description
BAS21GW
High-voltage switching diode
15 June 2017
Product data sheet
1. General description
High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns Low leakage current: IR ≤ 100 nA High reverse voltage VR ≤ 200 V Low capacitance: Cd ≤ 2 pF Small SMD plastic package AEC-Q101 qualified
3. Applications
High-speed switching General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF forward current
VR reverse voltage
VF forward voltage
IR reverse current trr reverse recovery time
Conditions Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C VR = 200 V; pulsed; Tj = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C
Min Typ Max Unit - - 225 mA - - 200 V - - 1.25 V
- - 100 nA - - 50 ns
Nexperia
BAS21GW
High-voltage switching diode
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K Cathode 2 A Anode
Simplified outline
12
SOD123
Graphic symbol
1
2
sym001
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS21GW
SOD123
Description Plastic surface-mounted package; 2 leads
Version SOD123
7. Marking
Table 4. Marking codes Type number BAS21GW
Marking code GC
BAS21GW
Product data sheet
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15 June 2017
© Nexperia B.V. 2017. All rights rese...
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