BAT54GW Datasheet (data sheet) PDF





BAT54GW Datasheet, 200mA Schottky barrier diodes

BAT54GW   BAT54GW  

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BAT54GW 30 V, 200 mA Schottky barrier di odes 24 November 2016 Product data she et 1. General description Planar Schot tky barrier diode with an integrated gu ard ring for stress protection, encapsu lated in an SOD123 small Surface-Mounte d Device (SMD) plastic package. 2. Fea tures and benefits • Low forward volt age: VF ≤ 400 mV • Low leakage curr ent: IR ≤ 2 µA • Reverse voltage V R ≤ 30 V • Low capacitance • Smal l SMD plastic package • AEC-Q101 qual ified 3. Applications • Ultra high-s peed switching • Line termination 4. Quick reference data Table 1. Quick r eference data Symbol Parameter IF fo rward current VF forward voltage IR reverse cu

BAT54GW Datasheet, 200mA Schottky barrier diodes

BAT54GW   BAT54GW  
rrent VR reverse voltage Conditions Mi n Typ Max Unit Tj = 25 °C - - 200 mA IF = 10 mA; tp ≤ 300 µs; δ ≤ 0. 02 ; Tj = 25 °C - - 400 mV VR = 25 V ; pulsed; Tj = 25 °C [1] - - 2 µA T j = 25 °C - - 30 V [1] Very short te st pulse to prevent junction self-heati ng. Nexperia BAT54GW 30 V, 200 mA Sch ottky barrier diodes 5. Pinning inform ation Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A a node [1] The marking bar indicates the cathode. Simplified outline 12 SOD123 Graphic symbol 1 2 sym001 6. Orderi ng information Table 3. Ordering infor mation Type number Package Name BAT 54GW SOD123 Description Plastic surfa ce-mounted package; 2 leads Version SO D123 7. Marking Table 4. Marking codes Type number BAT54GW Marking code G9 BAT54GW Product data sheet All informa tion provided in this document is subje ct to legal disclaimers. 24 November 20 16 © Nexperia B.V. 2017. All rights r eserved 2 / 12 Nexperia BAT54GW 30 V, 200 mA Schottky barrier diodes 8. Lim iting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Pa rameter Conditions VR reverse voltag e Tj = 25 °C IF forward current IFR M repetitive peak forward tp ≤ 1 s; ≤ 0.5 current IFSM non-repetitive peak tp < 10 ms; Tj(init) =








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