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IS64C5128AS

ISSI

512K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM DECEMBER 2016 FEATURES HIGH SPEED: (IS61/64C5128AL)...


ISSI

IS64C5128AS

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IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM DECEMBER 2016 FEATURES HIGH SPEED: (IS61/64C5128AL) High-speed access time: 10ns, 12 ns Low Active Power: 150 mW (typical) Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) High-speed access time: 25ns Low Active Power: 75 mW (typical) Low Standby Power: 1 mW (typical) CMOS standby TTL compatible interface levels Single 5V ± 10% power supply Fully static operation: no clock or refresh required Available in 36-pin SOJ (400-mil), 32-pin sTSOP-I, 32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II packages Commercial, Industrial and Automotive temperature ranges available Lead-free available DESCRIPTION The ISSI IS61C5128AL/AS and IS64C5128AL/AS are high- speed, 4,194,304-bit static RAMs organized as 524,288 words by 8 bits. They are fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C5128AL/AS and IS64C5128AL/AS are p...




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