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IS61WV20488FALL

ISSI

2M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV20488FALL IS61/64WV20488FBLL 2Mx8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY AUGUST 2019 FEA...


ISSI

IS61WV20488FALL

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IS61WV20488FALL IS61/64WV20488FBLL 2Mx8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY AUGUST 2019 FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV20488FALL) – 2.4V-3.6V VDD (IS61/64WV20488FBLL)  Packages available : - 44 pin TSOP (Type II) - 48 ball mini BGA (6mm x 8mm) - 54 pin TSOP (Type II)  Industrial and Automotive temperature support  Lead-free available  Data Control for upper and lower bytes DESCRIPTION The ISSI IS61/64WV20488FALL/BLL are high-speed, 16M bit static RAMs organized as 2048K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. The devices are packaged in the JEDEC standard 44-Pin TSOP (TYPE II), 48-pin mini BGA (6mm x 8mm), and 54-Pin TSOP (TYPE II).. FUNCTIONAL BLOCK DIAGRAM A0 – A20 VDD GND I/O 0 – I/O7 DECODER I/ O DATA CIRCUIT 2048K x 8 MEMORY ARRAY COLUMN /IO CS# or ...




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