2M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV20488FALL IS61/64WV20488FBLL
2Mx8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY
AUGUST 2019
FEA...
Description
IS61WV20488FALL IS61/64WV20488FBLL
2Mx8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY
AUGUST 2019
FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for
greater noise immunity TTL compatible inputs and outputs Single power supply
– 1.65V-2.2V VDD (IS61WV20488FALL) – 2.4V-3.6V VDD (IS61/64WV20488FBLL)
Packages available : - 44 pin TSOP (Type II) - 48 ball mini BGA (6mm x 8mm) - 54 pin TSOP (Type II)
Industrial and Automotive temperature support
Lead-free available Data Control for upper and lower bytes
DESCRIPTION The ISSI IS61/64WV20488FALL/BLL are high-speed, 16M bit static RAMs organized as 2048K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory.
The devices are packaged in the JEDEC standard 44-Pin TSOP (TYPE II), 48-pin mini BGA (6mm x 8mm), and 54-Pin TSOP (TYPE II)..
FUNCTIONAL BLOCK DIAGRAM
A0 – A20
VDD GND I/O 0 – I/O7
DECODER
I/ O DATA CIRCUIT
2048K x 8 MEMORY ARRAY
COLUMN /IO
CS# or ...
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