2SC4227 | CEL

DATA SHEET NPN SILICON RF TRANSISTOR NE68130 / 2SC4227 JEITA Part No. NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DISCONTINUED DESCRIPTION The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-p.

2SC4227 | CEL

NPN SILICON RF TRANSISTOR

Download 2SC4227 Datasheet

Download 2SC4227 Datasheet

DATA SHEET NPN SILICON RF TRANSISTOR NE68130 / 2SC4227 JEITA Part No. NPN EPITAXIAL SILICON RF .

DATA SHEET NPN SILICON RF TRANSISTOR NE68130 / 2SC4227 JEITA Part No. NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DISCONTINUED DESCRIPTION The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise :.

2SC4227 | Inchange Semiconductor

Silicon NPN Transistor

Download 2SC4227 Datasheet

Download 2SC4227 Datasheet

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emi.

2SC4227 | NEC

NPN Transistor

Download 2SC4227 Datasheet

Download 2SC4227 Datasheet

DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRA.

DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.2 +0.1 0.3 –0 0.65 0.65 FEATURES • Lo.