MMHS70R1K6Q Datasheet (data sheet) PDF





MMHS70R1K6Q Datasheet, N-Channel MOSFET

MMHS70R1K6Q   MMHS70R1K6Q  

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MMHS70R1K6Q Datasheet MMHS70R1K6Q 700V 1 .6Ω N-channel MOSFET  Description MMHS70R1K6Q is power MOSFET using Magn aChip’s advanced super junction techn ology that can realize very low on-resi stance and gate charge. It will provide much high efficiency by using optimize d charge coupling technology. These use r friendly devices give an advantage of Low EMI to designers as well as low sw itching loss.  Key Parameters Para meter VDS @ Tj, max RDS(on), max VTH, t yp ID Qg, typ Value 750 1.6 3 5.4 6.1 Unit V Ω V A nC  Package & Inter nal Circuit D D G S G S  Features  Low Power Loss by High Speed Switc hing and Low On-Resistance  100% Avalanc

MMHS70R1K6Q Datasheet, N-Channel MOSFET

MMHS70R1K6Q   MMHS70R1K6Q  
he Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switch ing Applications  Adapter  Order ing Information Order Code Marking M MHS70R1K6QURH 70R1K6Q Temp. Range -55 ~ 150 oC Package SOT-223-2L Packing R eel RoHS Status Compliant Oct. 2017 R evision 1.0 1 MagnaChip Semiconductor Ltd. MMHS70R1K6Q Datasheet  Absolu te Maximum Rating (Tc=25 oC unless othe rwise specified) Parameter Drain – S ource voltage Gate – Source voltage C ontinuous drain current Pulsed drain cu rrent(1) Power dissipation Single - pul se avalanche energy MOSFET dv/dt rugged ness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature 1) Pulse width tP limited b y Tj,max 2) ISD ≤ ID, VDS peak ≤ V( BR)DSS Symbol VDSS VGSS ID IDM PD EAS dv/dt dv/dt Tstg Tj Rating 700 ±30 5. 4 3.4 16.2 5.4 26 50 15 -55 ~150 150 U nit V V A A A W mJ V/ns V/ns oC oC Not e TC=25 oC TC=100 oC  Thermal Chara cteristics Parameter Thermal resistance , junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rth ja Value 23 75 Unit oC /W oC /W Oct. 2017 Revision 1.0 2 MagnaChip Semicon ductor Ltd. MMHS70R1K6Q Datasheet  Static Characteristics (Tc=25 oC unles s otherwise specified) Parameter Drain – source breakdown voltage Gate threshol








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