SEMICONDUCTOR
RFD14N05, RFD14N05SM, RFP14N05
December 1995
14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power...
SEMICONDUCTOR
RFD14N05, RFD14N05SM, RFP14N05
December 1995
14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Features
Packaging
14A, 50V rDS(ON) = 0.100Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve
JEDEC TO-220AB DRAIN (FLANGE)
SOURCE DRAIN GATE
UIS Rating Curve +175oC Operating Temperature
Description
The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE DRAIN GATE
JEDEC TO-252AA DRAIN (FLANGE)
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
GATE SOURCE
RFD14N05 RFD14N05SM RFP14N05
TO-251AA TO-252AA TO-220AB
F14N05 F14N05 RFP14N05
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
G
Formerly developmental type TA09770.
S
Absolute Maximum Ratings TC = +25oC
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...