Data Sheet
RFD14N05SM9A
September 2013
N-Channel Power MOSFET 50V, 14A, 100 mΩ
These are N-channel power MOSFETs manuf...
Data Sheet
RFD14N05SM9A
September 2013
N-Channel Power MOSFET 50V, 14A, 100 mΩ
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER
PACKAGE
RFD14N05SM9A TO-252AA
BRAND F14N05
Features
14A, 50V
rDS(ON) = 0.100Ω Temperature Compensating PSPICE® Model
Peak Current vs Pulse Width Curve
UIS Rating Curve 175oC Operating Temperature
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G S
Packaging
JEDEC TO-252AA
GATE SOURCE
DRAIN (FLANGE)
©2004 Fairchild Semiconductor Corporation
RFD14N05SM9A Rev. C1
RFD14N05SM9A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . ...