IXDI630

INTEGRATED CIRCUITS DIVISION Features 30A Peak Source/Sink Drive Current High Operating Voltage Capability: 35V -40°C to +125°C Extended Operating Temperature Range Under-Voltage Lockout Protection Logic Input Withstands Negative Swing of up to 5V Fast Rise and Fall Times: < 20ns Low Propagation Delay Time Low 10A Supply Current Low Output Impedance Applications Efficient Power MOSFET and IGBT Switching Switch Mode Power Supplies Motor Controls DC to DC Converters Class-D Switching Amplifiers Pulse Transformer Driver Ordering Information Part Number IXDD630CI IXDD630MCI IXDD630YI IXDD630MYI IXDI630CI IXDI630MCI IXDI630YI IXDI630MYI IXDN630CI IXDN630MCI IXDN630YI IXDN630MYI Logic Configuration IN OUT EN IN OUT IN OUT UVLO 12.5V 9V 12.5V 9V 12.5V 9V 12.5V 9V 12.5V 9V 12.5V 9V IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers Description The IXDD630/IXDI630/IXDN630 high-speed gate drivers are especially well suited for driving the latest IXYS power MOSFETs and IGBTs. The IXD_630 output can source and sink 30A of peak current while producing voltage rise and fall times of less than 20ns. Internal circuitry eliminates cross conduction and current "shoot-through," and the driver is virtually immune to latch up. Under-voltage lockout (UVLO) circuitry holds the output LOW until sufficient supply voltage is applied (12.5V for the IXD_630 versions, and 9V for the IXD_630M versions). Low propagation delays and fast, matched rise and fall times make ...