BC817DS Datasheet (data sheet) PDF





BC817DS Datasheet, NPN/NPN general purpose double transistors

BC817DS   BC817DS  

Search Keywords: BC817DS, datasheet, pdf, nexperia, NPN/NPN, general, purpose, double, transistors, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

BC817DS NPN/NPN general purpose double transistors 25 June 2019 Product data sheet 1. General description NPN/NPN general-purpose double transistors in a n SOT457 (SC-74) plastic package. PNP/P NP complement: BC807DS NPN/PNP compleme nt: BC817DPN 2. Features and benefits • Reduces component count • Reduces pick and place costs • AEC-Q101 qual ified 3. Applications • General purp ose switching and amplification 4. Qui ck reference data Table 1. Quick refer ence data Symbol Parameter Per trans istor VCEO collector-emitter voltage IC collector current ICM peak collecto r current hFE DC current gain Conditio ns open base single pulse; tp ≤ 1

BC817DS Datasheet, NPN/NPN general purpose double transistors

BC817DS   BC817DS  
ms VCE = 1 V; IC = 100 mA [1] Pulsed t est: tp ≤ 300 μs; δ ≤ 0.02 Min T yp Max Unit -- --[1] 160 - 45 V 500 m A 1A 400 5. Pinning information Table 2. Pinning information Pin Symbol Desc ription 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector T R1 Simplified outline 654 Graphic sym bol C1 B2 E2 123 SC-74; TSOP6 (SOT457) TR2 TR1 E1 B1 C2 sym020 Nexperia BC 817DS NPN/NPN general purpose double tr ansistors 6. Ordering information Tab le 3. Ordering information Type number Package Name Description BC817DS SC-74; TSOP6 plastic, surface-mounted p ackage (SC-74; TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking co des Type number BC817DS Marking code N 3 8. Limiting values Table 5. Limitin g values In accordance with the Absolut e Maximum Rating System (IEC 60134). S ymbol Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg Per device Pt ot Parameter Conditions collector-ba se voltage collector-emitter voltage em itter-base voltage collector current pe ak collector current peak base current total power dissipation junction temper ature ambient temperature storage tempe rature open emitter open base open col lector single pulse; tp ≤ 1 ms Tamb 25 °C total power dissipation Tamb ≤ 25 °C Min Max - 50








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)