PHD20N06T Datasheet (data sheet) PDF





PHD20N06T Datasheet, N-channel TrenchMOS standard level FET

PHD20N06T   PHD20N06T  

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PHD20N06T N-channel TrenchMOS standard l evel FET Rev. 02 — 1 December 2009 P roduct data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This produc t is designed and qualified for use in computing, communications, consumer and industrial applications only.

PHD20N06T Datasheet, N-channel TrenchMOS standard level FET

PHD20N06T   PHD20N06T  
1.2 Features and benefits „ Low condu ction losses due to low on-state resist ance „ Suitable for high frequency ap plications due to fast switching charac teristics 1.3 Applications „ DC-to-DC convertors „ General purpose switchin g „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick r eference Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤








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