Ultra low capacitance bidirectional double ESD protection array
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection
array
15 October 2018
Product data sheet
1. G...
Description
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection
array
15 October 2018
Product data sheet
1. General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients.
2. Features and benefits
Bidirectional ESD protection of up to two lines Ultra low diode capacitance: Cd = 2.9 pF Ultra low leakage current: IRM = 5 nA ESD protection up to 10 kV IEC 61000-4-2; level 4 (ESD) AEC-Q101 qualified
3. Applications
Computers and peripherals Audio and video equipment Cellular handsets and accessories 10/100/1000 Mbit/s Ethernet Communication systems Portable electronics SIM card protection High-speed data lines
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Cd diode capacitance
Conditions Tamb = 25 °C
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Min Typ Max Unit - - 5V
- 2.9 3.5 pF
Nexperia
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection array
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 CC common cathode
Simplified outline
1 3
2
Transparent top view
DFN1006-3 (SOT883)
Graphic symbol
K1 CC
K2
006aab331
6. Ordering information
Table 3. Ordering information...
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