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PESD5V0U2BM

nexperia

Ultra low capacitance bidirectional double ESD protection array

PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array 15 October 2018 Product data sheet 1. G...


nexperia

PESD5V0U2BM

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Description
PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array 15 October 2018 Product data sheet 1. General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 2. Features and benefits Bidirectional ESD protection of up to two lines Ultra low diode capacitance: Cd = 2.9 pF Ultra low leakage current: IRM = 5 nA ESD protection up to 10 kV IEC 61000-4-2; level 4 (ESD) AEC-Q101 qualified 3. Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories 10/100/1000 Mbit/s Ethernet Communication systems Portable electronics SIM card protection High-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions Tamb = 25 °C f = 1 MHz; VR = 0 V; Tamb = 25 °C Min Typ Max Unit - - 5V - 2.9 3.5 pF Nexperia PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 CC common cathode Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol K1 CC K2 006aab331 6. Ordering information Table 3. Ordering information...




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