PMZB670UPE

PMZB670UPE 20 V, single P-channel Trench MOSFET Rev. 3 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  Ultra thin package profile of 0.37 mm 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -400 mA; Tj = 25 °C [1] Min -8 - - [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Typ Max Unit - -20 V - 8V - -680 mA 0.67 0.85 Ω Nexperia PMZB670UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G gate S source D drain Simplified outline 1 3 2 Transparent top view DFN1006B-3 (SOT883B) Graphic symbol D G S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name PMZB670UPE DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands; body 1...