PMN30UN

PMN30UN 30 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1240 mW 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 4.5 A; Tj = 25 °C Min Typ Max Unit - - 30 V -12 - 12 V [1] - - 5.7 A - 33 40 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMN30UN 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 654 123 TSOP6 (SOT457) Graphic symbol D G S 017aaa253 6. Ordering information Table 3. Ordering information Type number Package Name PMN30UN TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 7. Marking Table 4. Marking codes Type number PMN30UN Marking code H2 PMN30UN Product da...