PSMN5R0-100ES

PSMN5R0-100ES N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Rev. 3 — 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Min Typ Max Unit - - 100 V [1] - - 120 A Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics Tmb = 25 °C; see Figure 2 --55 - 338 W 175 °C VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 - VGS = 10 V; ID = 25 A; [2] - Tj = 25 °C; see Figure 13 7.7 9 mΩ 4.3 5 mΩ QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 50 V; see Figure 14; see Figure 15 - 49 - nC - 170 - nC Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω; Unclamped - - 537 mJ Nexperia PSMN5R0-100ES N-channel ...