Document
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 2 — 4 July 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching
Power OR-ing Server power supplies Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
RDSon
drain-source on-state resistance
Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12
Min Typ Max Unit
- - 25 V
[1] - - 100 A
- - 272 W
-55 -
175 °C
- 0.95 1.25 mΩ - 0.75 0.99 mΩ
Nexperia
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 25 A;
VDS = 12 V; see Figure 14;
see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 15; see Figure 14
[1] Continuous current is limited by package
2. Pinning information
Min Typ Max Unit - 14 - nC - 51 - nC
Table 2. Pin 1 2 3 4 mb
Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain
Simplified outline
mb
1234
SOT669 (LFPAK; Power-SO8)
Graphic symbol
D
G mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN0R9-25YLC LFPAK; Power-SO8
Description plastic single-ended surface-mounted package; 4 leads
Version SOT669
PSMN0R9-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 July 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15
Nexperia
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
IDM
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
peak drain current
Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; see Figure 1 Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2 MM (JEDEC JESD22-A115)
IS source current ISM peak source current Avalanche ruggedness
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 25 V; unclamped; RGS = 50 Ω; see Figure 3
Min -20 [1] [1] -
-55 -55 920
[1] -
-
[1] Continuous current is limited by package
Max 25 25 20 100 100 1563
Unit V V V A A A
272 W 175 °C 175 °C 260 °C -V
100 A 1563 A
342 mJ
400 ID (A) 320
240
003aaf 521
120
Pder (%)
80
03na19
160 80
(1)
40
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (°C)
Fig 1. Continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
PSMN0R9-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 July 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15
Nexperia
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
103 IAL (A) 102
10
003aaf 535
(1) (2)
1
10-1 10-3
10-2
10-1
1 10 tAL (ms )
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
104 ID (A)
103
102
Limit R DS on = VDS / ID
003aaf 522
tp =10 s 100 s
DC 1 ms 10
10 ms 100 ms 1
10-1 10-1 1 10 102 VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN0R9-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 July 2011
© Nexperia B.V. 2017. All rights reserved
4 of 15
Nexperia
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
5. Thermal characteristics
Table 5. Symbol .