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PSMN0R9-25YLC Dataheets PDF



Part Number PSMN0R9-25YLC
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN0R9-25YLC DatasheetPSMN0R9-25YLC Datasheet (PDF)

PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Optimised for 4.5V Gate drive utilising NextPower Sup.

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PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads  Ultra low Rdson and low parasitic inductance 1.3 Applications  DC-to-DC converters  Lithium-ion battery protection  Load switching  Power OR-ing  Server power supplies  Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Min Typ Max Unit - - 25 V [1] - - 100 A - - 272 W -55 - 175 °C - 0.95 1.25 mΩ - 0.75 0.99 mΩ Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 15; see Figure 14 [1] Continuous current is limited by package 2. Pinning information Min Typ Max Unit - 14 - nC - 51 - nC Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain Simplified outline mb 1234 SOT669 (LFPAK; Power-SO8) Graphic symbol D G mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name PSMN0R9-25YLC LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 PSMN0R9-25YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 © Nexperia B.V. 2017. All rights reserved 2 of 15 Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Tmb = 25 °C; see Figure 1 Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Ptot total power dissipation Tstg storage temperature Tj junction temperature Tsld(M) peak soldering temperature VESD electrostatic discharge voltage Source-drain diode Tmb = 25 °C; see Figure 2 MM (JEDEC JESD22-A115) IS source current ISM peak source current Avalanche ruggedness Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 25 V; unclamped; RGS = 50 Ω; see Figure 3 Min -20 [1] [1] - -55 -55 920 [1] - - [1] Continuous current is limited by package Max 25 25 20 100 100 1563 Unit V V V A A A 272 W 175 °C 175 °C 260 °C -V 100 A 1563 A 342 mJ 400 ID (A) 320 240 003aaf 521 120 Pder (%) 80 03na19 160 80 (1) 40 0 0 50 100 150 200 Tmb (C) 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature PSMN0R9-25YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 © Nexperia B.V. 2017. All rights reserved 3 of 15 Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 103 IAL (A) 102 10 003aaf 535 (1) (2) 1 10-1 10-3 10-2 10-1 1 10 tAL (ms ) Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time 104 ID (A) 103 102 Limit R DS on = VDS / ID 003aaf 522 tp =10  s 100 s DC 1 ms 10 10 ms 100 ms 1 10-1 10-1 1 10 102 VDS (V) Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN0R9-25YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 © Nexperia B.V. 2017. All rights reserved 4 of 15 Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 5. Thermal characteristics Table 5. Symbol .


PSMNR70-40SSH PSMN0R9-25YLC PMV280ENEA


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