PMV280ENEA Datasheet (data sheet) PDF





PMV280ENEA Datasheet, N-channel MOSFET

PMV280ENEA   PMV280ENEA  

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PMV280ENEA 100 V, N-channel Trench MOSFE T 11 April 2019 Product data sheet 1. General description N-channel enhancem ent mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mou nted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatibl e • Extended temperature range Tj = 1 75 °C • Trench MOSFET technology

PMV280ENEA Datasheet, N-channel MOSFET

PMV280ENEA   PMV280ENEA  
• ElectroStatic Discharge (ESD) prote ction > 2 kV HBM (class H2) • AEC-Q10 1 qualified 3. Applications • Relay driver • High-speed line driver • L ow-side load switch • Switching circu its 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-so urce voltage ID drain current Static characteristics RDSon drain-source on-








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