PSMN4R6-60BS

PSMN4R6-60BS N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] Continuous current is limited by package. Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 Min [1] -55 VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 - VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14; see Figure 15 - VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped - Typ Max Unit - 60 V - 100 A - 211 W - 175 °C 5.98 7 3.74 4.4 mΩ mΩ 14.8 70.8 - nC nC - 266 mJ Nexperia PS...