BSS138BK

BSS138BK 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 4 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD protection up to 1.5 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 350 mA; Tj = 25 °C Min Typ Max Unit - - 60 V -20 - 20 V [1] - - 360 mA - 1 1.6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia BSS138BK 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G gate S source D drain Simplified outline 3 Graphic symbol D 12 SOT23 (TO-236AB) G S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name BSS138BK TO-236AB 4. Marking Description plastic surface-mounted package; 3 leads Table 4. Marking codes Type number BSS138BK [1] % = placeholder for manufacturi...