NX2301P

NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ 1.8 V RDSon rated for Low Voltage Gate Drive „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ High-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.5 V Tj = 25 °C; VGS = −4.5 V; ID = −1 A - - −20 V - - ±8 V [1] - - −2 A [2] - 100 120 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. Nexperia NX2301P 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain Simplified outline Graphic symbol 3D G 12 S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description NX2301P TO-236AB plastic surface-mounted package; 3 leads 4. Marking Table 4. Marking codes Type number NX2301P [1] * = placeholder for manufacturing site co...