NX2301P Datasheet (data sheet) PDF





NX2301P Datasheet, P-channel MOSFET

NX2301P   NX2301P  

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NX2301P 20 V, 2 A P-channel Trench MOSFE T Rev. 1 — 26 October 2010 Product d ata sheet 1. Product profile 1.1 Gene ral description P-channel enhancement m ode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Tren ch MOSFET technology. 1.2 Features and benefits „ 1.8 V RDSon rated for Low Voltage Gate Drive „ Very fast

NX2301P Datasheet, P-channel MOSFET

NX2301P   NX2301P  
switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications Relay driver „ High-speed line drive r „ High-side loadswitch „ Switching circuits 1.4 Quick reference data Tab le 1. Quick reference data Symbol Para meter Conditions Min Typ Max Unit VD S VGS ID RDSon drain-source voltage ga te-source voltage drain current drain-s ource on-state resistance Tamb =








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