PMDPB55XP
20 V, dual P-channel Trench MOSFET
Rev. 3 — 4 June 2012
Product data sheet
1. Product profile
1.1 General d...
PMDPB55XP
20 V, dual P-channel Trench MOSFET
Rev. 3 — 4 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect
Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1.3 Applications
Charging switch for portable devices DC/DC converters Small brushless DC motor drive
Power management in battery-driven portables
Hard disc and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per
transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -4.5 A
Static characteristics (per
transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C resistance
- 55 70 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMDPB55XP
20 V, dual P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8
Pinning information Symbol Description S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 D1 drain TR1 D2...