PMBD7100

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD7100 High-speed double diode Product data sheet 2003 Nov 07 NXP Semiconductors High-speed double diode Product data sheet PMBD7100 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 100 V Repetitive peak reverse voltage: max. 100 V Repetitive peak forward current: max. 450 mA. PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common connection APPLICATIONS High-speed switching in thick and thin-film circuits. DESCRIPTION The PMBD7100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 SMD plastic package. MARKING TYPE NUMBER PMBD7100 MARKING CODE(1) *3A Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. handbook, halfpage 3 3 12 1 Top view 2 MAM383 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PMBD7100 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2003 Nov 07 2 NXP Semiconductors High-speed double diode Product data sheet PMBD7100 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ptot total power...