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PESD5V0U1BL Dataheets PDF



Part Number PESD5V0U1BL
Manufacturers nexperia
Logo nexperia
Description Low capacitance bidirectional ESD protection diode
Datasheet PESD5V0U1BL DatasheetPESD5V0U1BL Datasheet (PDF)

PESD5V0U1BL Low capacitance bidirectional ESD protection diode 11 October 2018 Product data sheet 1. General description Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in an SOD882 leadless ultra-small plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • Bidirectional ESD protection of one line • Low diode capacitance: Cd = 2.9 pF • Ultra low leakage current: IRM = 5 nA • ESD protecti.

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PESD5V0U1BL Low capacitance bidirectional ESD protection diode 11 October 2018 Product data sheet 1. General description Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in an SOD882 leadless ultra-small plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • Bidirectional ESD protection of one line • Low diode capacitance: Cd = 2.9 pF • Ultra low leakage current: IRM = 5 nA • ESD protection of up to 10 kV • IEC 61000-4-2, level 4 (ESD) • AEC-Q101 qualified 3. Applications • Computers and peripherals • Audio and video equipment • Cellular handsets and accessories • 10/100/1000 Ethernet • Local Area Network (LAN) equipment • Communication systems • Portable electronics • SIM card protection • High-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions Tamb = 25 °C f = 1 MHz; VR = 0 V; Tamb = 25 °C f = 1 MHz; VR = 5 V; Tamb = 25 °C Min Typ Max Unit - - 5V - 2.9 3.5 pF - 1.9 - pF Nexperia PESD5V0U1BL Low capacitance bidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) Simplified outline 12 Transparent top view DFN1006-2 (SOD882) Graphic symbol K1 K2 sym045 6. Ordering information Table 3. Ordering information Type number Package Name PESD5V0U1BL DFN1006-2 Description Version SOD882 7. Marking Table 4. Marking codes Type number PESD5V0U1BL Marking code AN PESD5V0U1BL Product data sheet All information provided in this document is subject to legal disclaimers. 11 October 2018 © Nexperia B.V. 2018. All rights reserved 2 / 10 Nexperia PESD5V0U1BL Low capacitance bidirectional ESD protection diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Tj junction temperature Tamb ambient temperature Tstg storage temperature ESD maximum ratings VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to pin 2. IPP 100 % 90 % Min Max Unit - 150 °C -55 150 °C -65 150 °C [1] [2] - 10 kV 8 kV 10 % tr = 0.6 ns to 1 ns 30 ns 60 ns Fig. 1. ESD pulse waveform according to IEC 61000-4-2 t 001aaa631 PESD5V0U1BL Product data sheet All information provided in this document is subject to legal disclaimers. 11 October 2018 © Nexperia B.V. 2018. All rights reserved 3 / 10 Nexperia PESD5V0U1BL Low capacitance bidirectional ESD protection diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions VRWM reverse standoff voltage Tamb = 25 °C VBR breakdown voltage IR = 5 mA; Tamb = 25 °C IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C f = 1 MHz; VR = 5 V; Tamb = 25 °C rdif differential resistance IR = 1 mA; Tamb = 25 °C 3.0 006aab036 Cd (pF) 2.6 -VCL -VBR -VRWM 2.2 Min Typ Max Unit - - 5V 5.5 7 9.5 V - 5 100 nA - 2.9 3.5 pF - 1.9 - pF - - 100 Ω IPP IR IRM -IRM -IR VRWM VBR VCL -+ 1.8 012345 VR (V) f = 1 MHz; Tamb = 25 °C Fig. 2. Diode capacitance as a function of reverse voltage; typical values -IPP 006aaa676 Fig. 3. V-I characteristics for a bidirectional ESD protection diode PESD5V0U1BL Product data sheet All information provided in this document is subject to legal disclaimers. 11 October 2018 © Nexperia B.V. 2018. All rights reserved 4 / 10 Nexperia PESD5V0U1BL Low capacitance bidirectional ESD protection diode ESD TESTER Rd Cs IEC 61000-4-2 ed. 2 network Cs = 150 pF; Rd = 330 Ω DUT (DEVICE UNDER TEST) RG 223/U 50 Ω coax 40 dB ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω vertical scale = 10 V/div horizontal scale = 15 ns/div vertical scale = 10 V/div horizontal scale = 100 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) GND vertical scale = 10 V/div horizontal scale = 15 ns/div clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) GND unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig. 4. ESD clamping test setup and waveforms vertical scale = 10 V/div horizontal scale = 100 ns/div clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) 006aab037 PESD5V0U1BL Product data sheet All information provided in this document is subject to legal disclaimers. 11 October 2018 © Nexperia B.V. 2018. All rights reserved 5 / 10 Nexperia PESD5V0U1BL Low capacitance bidirectional ESD protection diode 10. Application information The device is designed for the protection of one bidirectional data line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both positive and negative with respect to ground. line to be pr.


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