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BZB84-C2V4 Dataheets PDF



Part Number BZB84-C2V4
Manufacturers NXP
Logo NXP
Description Dual Zener diodes
Datasheet BZB84-C2V4 DatasheetBZB84-C2V4 Datasheet (PDF)

BZB84 series Dual Zener diodes Rev. 03 — 9 June 2009 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I Non-repetitive peak reverse power dissipation: ≤ 40 W I Total power dissipation: ≤ 300 mW I Two tolerance series: B = ±2 % and C = ±5 % I Wide working voltage range: nominal 2.4 V to 75 V (E24 range) I Small plastic package suitable for surface-mounted design I D.

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BZB84 series Dual Zener diodes Rev. 03 — 9 June 2009 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I Non-repetitive peak reverse power dissipation: ≤ 40 W I Total power dissipation: ≤ 300 mW I Two tolerance series: B = ±2 % and C = ±5 % I Wide working voltage range: nominal 2.4 V to 75 V (E24 range) I Small plastic package suitable for surface-mounted design I Dual common anode configuration I AEC-Q101 qualified 1.3 Applications I General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VF PZSM forward voltage non-repetitive peak reverse power dissipation Conditions IF = 10 mA [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge Min Typ Max Unit [1] - - 0.9 V [2] - - 40 W Free Datash NXP Semiconductors BZB84 series Dual Zener diodes 2. Pinning information Table 2. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode Simplified outline Graphic symbol 33 12 12 006aaa154 3. Ordering information 4. Marking Table 3. Ordering information Type number Package Name Description BZB84-B2V4 to BZB84-C75[1] - plastic surface-mounted package; 3 leads [1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. Version SOT23 Table 4. Marking codes Type number Marking code[1] BZB84-B2V4 V9* BZB84-B2V7 VA* BZB84-B3V0 VB* BZB84-B3V3 VC* BZB84-B3V6 VD* BZB84-B3V9 VE* BZB84-B4V3 VF* BZB84-B4V7 VG* BZB84-B5V1 VH* BZB84-B5V6 VK* BZB84-B6V2 VL* BZB84-B6V8 VM* BZB84-B7V5 VN* BZB84-B8V2 VP* BZB84-B9V1 VR* Type number BZB84-C2V4 BZB84-C2V7 BZB84-C3V0 BZB84-C3V3 BZB84-C3V6 BZB84-C3V9 BZB84-C4V3 BZB84-C4V7 BZB84-C5V1 BZB84-C5V6 BZB84-C6V2 BZB84-C6V8 BZB84-C7V5 BZB84-C8V2 BZB84-C9V1 Marking code[1] U9* UA* UB* UC* UD* UE* UF* UG* UH* UK* UL* UM* UN* UP* UR* BZB84_SER_3 Product data sheet Rev. 03 — 9 June 2009 © NXP B.V. 2009. All rights reserved. 2 of 14 Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors BZB84 series Dual Zener diodes Table 4. Marking codes …continued Type number Marking code[1] BZB84-B10 VS* BZB84-B11 VT* BZB84-B12 VU* BZB84-B13 VV* BZB84-B15 VW* BZB84-B16 PT* BZB84-B18 PU* BZB84-B20 RP* BZB84-B22 PV* BZB84-B24 PW* BZB84-B27 PX* BZB84-B30 PY* BZB84-B33 PZ* BZB84-B36 RA* BZB84-B39 RB* BZB84-B43 RC* BZB84-B47 RD* BZB84-B51 RE* BZB84-B56 RF* BZB84-B62 RG* BZB84-B68 RH* BZB84-B75 RJ* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Type number BZB84-C10 BZB84-C11 BZB84-C12 BZB84-C13 BZB84-C15 BZB84-C16 BZB84-C18 BZB84-C20 BZB84-C22 BZB84-C24 BZB84-C27 BZB84-C30 BZB84-C33 BZB84-C36 BZB84-C39 BZB84-C43 BZB84-C47 BZB84-C51 BZB84-C56 BZB84-C62 BZB84-C68 BZB84-C75 Marking code[1] US* UT* UU* UV* UW* PB* PC* RQ* PD* PE* PF* PG* PH* PJ* PK* PL* PM* PN* PP* PQ* PR* PS* Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per diode IF forward current IZSM non-repetitive peak reverse current [1] - PZSM non-repetitive peak reverse power dissipation [1] - Max Unit 200 mA see Table 8, 9, 10 and 11 40 W BZB84_SER_3 Product data sheet Rev. 03 — 9 June 2009 © NXP B.V. 2009. All rights reserved. 3 of 14 Free Dat NXP Semiconductors BZB84 series Dual Zener diodes Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per device Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [2] −55 −65 Max 300 150 +150 +150 Unit mW °C °C °C [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per device; single diode loaded Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point Conditions in free air Min Typ Max Unit [1] - - 417 K/W [2] - - 100 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Soldering points at pins 1 and 2. 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Per diode VF forward voltage [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions IF = 10 mA Min Typ Max Unit [1] - - 0.9 V BZB84_SER_3 Product data sheet Rev. 03 — 9 June 2009 © NXP B.V. 2009. All rights reserved. 4 of 14 Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors BZB84 series Dual Zener diodes Table 8. Characteristics per type; BZ.


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