HBT169M

SMD Type Silicon Controlled Rectifiers HBT169M Thyristor Features Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-state current :0.8A Non-repetitive peak on-state current :8A Absolute Maximum Ratings Ta = 25 Parameter Peak Repetitive Forward and Reverse Blocking Voltage* Forward Current RMS Non-repetitive peak on-state current (t=10ms) Non-repetitive peak on-state current (t=8.3ms) Circuit Fusing Considerations (t = 10ms) Repetitive rate of rise of on-state current after triggering *1 Peak gate current Peak Gate Power Forward, TA = 25 Average Gate Power Forward, TA = 25 Peak Gate Current Forward, TA = 25 Peak gate voltage Peak Gate Voltage Reverse Thermal resistance junction to lead *2 Thermal resistance junction to ambient *2 Storage temperature Operating junction temperature *1 ITM=2A; IG=10mA; dIG/dt=100mA/us) *2 pcb mounted;lead length=4mm 1 GATE 2 ANODE 3 CATHODE Symbol VDRM and VRRM IT(RMS) ITSM I2t dIT/dt IGM PGM PGF(AV) IGFM VGM VGRM Rth j-lead Rth j-a Tstg TJ Rating 400 0.8 8 9 0.32 50 1 2 0.1 1 5 5 60 150 150 125 Unit V A A A A2s A/us A W W A V V K/W K/W www.kexin.com.cn 1 SMD Type Thyristor HBT169M Electrical Characteristics (Ta = 25 , unless otherwise noted.) Parameter On-state Voltage Gate Trigger Current (Continuous dc)*2 TC = 25 Latching Current Holding Current Gate Trigger Voltage Off-state Leakage Current Critical rate of rise of off-state voltage Gate controlled turn-on time Symbol Testconditons Min Typ. Max Un...