KDS181-RTR

SMD Type Silicon Epitaxial Planar Diode KDS181-RTR Diodes Features Low forward voltage : V F(3) = 0.92 V(Typ) Fast reverse recovery time : t rr = 1.6ns (MAX.) Small total capacitance : CT = 2.2pF(Typ) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Reverse voltage Average forward current Maximum (peak) forward current Surge current (10 ms) Power dissipation Junction Temperature Storage Temperature Symbol VRM VR IO IFM IFSM PD Tj Tstg Rating 85 80 100 300 2 150 150 -55 to +150 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF(1) VF(2) VF(3) IR CT trr Test Conditions IF = 1 mA IF = 10 mA IF = 100 mA VR = 80 V VR = 0, f = 1.0 MHz IF = 10 mA Min Typ Max Unit 0.61 0.74 V 0.92 1.20 0.5 A 2.2 4.0 pF 1.6 4.0 ns Marking Marking A3 www.kexin.com.cn 1 SMD Type Typical Characteristics KDS181-RTR Diodes 2 www.kexin.com.cn ...