Document
SSMMDDTTyyppee
MOSFET
Dual N-Channel High Density Trench MOSFET KI8205T
Features
Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package.
( SOT-23-6 ) 0.4+0.1
-0.1
Unit: mm
0.4
+0.21.6 -0.1
+0.22.8 -0.1
0.55
1
+0.01
2 -0.01
+0.2 -0.1
0.15 +0.02 -0.02
+0.11.1 -0.1
0-0.1 +0.10.68
-0.1
D1
G1 S1
D2
G2 S2
S1 D1/D2
S2
1 2 3
6 G1 5 D1/D2 4 G2
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 *1 Drain Current-Continuou -Pulse *2 Drain-Source Diode Forward Current *1 Maximum Power Dissipation TA=25 *1
TA=75 Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient
Symbol VDS VGS ID IDM IS
PD
TJ,TSTG RthJA
*1 Surface Mounted on FR4 Board , t 10sec .
*2 Pulse width limited by maximum junction temperature.
Rating 20 12 4.3 21.5 1.7 1.25 0.75
- 55 to 150 100
Unit V V A A A W
/W
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SMD Type
MOSFET
Dual N-Channel High Density Trench MOSFET KI8205T
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage *1
Symbol VDSS IDSS IGSS VGS(th)
Drain-Source On-State Resistance *1
RDS(on)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage
*1 Pulse width 300 s , Duty Cycle
2% .
CISS COSS CRSS td(on)
tr td(off)
tf Qg Qgs Qgd VSD
Testconditions VGS = 0V , ID = 250 A VDS = 20V , VGS = 0V VGS = 12V , VDS = 0V VDS = VGS , ID = 250uA VGS = 4V , ID = 4.3A VGS = 2.5V , ID = 3.4A
VDS = 8V , VGS = 0V,f = 1.0MHz
VDD = 10V , ID = 1A VGEN = 4.5V RL = 10 RGEN = 6
VDS = 10V , ID = 3A,VGS = 4.5V
VGS = 0V , IS = 1.7A *1
Min Typ Max Unit 20 V
1A 100 nA 0.45 1 V 30
m 46 550 164 pF 138 10 ns 8.2 ns 25 ns 6.7 ns 6.2 nC 1.8 nC 1.5 nC 1.2 V
■ Marking
Marking
8205
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