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KI8205T Dataheets PDF



Part Number KI8205T
Manufacturers Kexin
Logo Kexin
Description Dual N-Channel High Density Trench MOSFET
Datasheet KI8205T DatasheetKI8205T Datasheet (PDF)

SSMMDDTTyyppee MOSFET Dual N-Channel High Density Trench MOSFET KI8205T Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. ( SOT-23-6 ) 0.4+0.1 -0.1 Unit: mm 0.4 +0.21.6 -0.1 +0.22.8 -0.1 0.55 1 +0.01 2 -0.01 +0.2 -0.1 0.15 +0.02 -0.02 +0.11.1 -0.1 0-0.1 +0.10.68 -0.1 D1 G1 S1 D2 G2 S2 S1 D1/D2 S2 1 2 3 6 G1 5 D1/D2 4 G2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Conti.

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SSMMDDTTyyppee MOSFET Dual N-Channel High Density Trench MOSFET KI8205T Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. ( SOT-23-6 ) 0.4+0.1 -0.1 Unit: mm 0.4 +0.21.6 -0.1 +0.22.8 -0.1 0.55 1 +0.01 2 -0.01 +0.2 -0.1 0.15 +0.02 -0.02 +0.11.1 -0.1 0-0.1 +0.10.68 -0.1 D1 G1 S1 D2 G2 S2 S1 D1/D2 S2 1 2 3 6 G1 5 D1/D2 4 G2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 *1 Drain Current-Continuou -Pulse *2 Drain-Source Diode Forward Current *1 Maximum Power Dissipation TA=25 *1 TA=75 Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient Symbol VDS VGS ID IDM IS PD TJ,TSTG RthJA *1 Surface Mounted on FR4 Board , t 10sec . *2 Pulse width limited by maximum junction temperature. Rating 20 12 4.3 21.5 1.7 1.25 0.75 - 55 to 150 100 Unit V V A A A W /W www.kexin.com.cn 1 SMD Type MOSFET Dual N-Channel High Density Trench MOSFET KI8205T Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage *1 Symbol VDSS IDSS IGSS VGS(th) Drain-Source On-State Resistance *1 RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage *1 Pulse width 300 s , Duty Cycle 2% . CISS COSS CRSS td(on) tr td(off) tf Qg Qgs Qgd VSD Testconditions VGS = 0V , ID = 250 A VDS = 20V , VGS = 0V VGS = 12V , VDS = 0V VDS = VGS , ID = 250uA VGS = 4V , ID = 4.3A VGS = 2.5V , ID = 3.4A VDS = 8V , VGS = 0V,f = 1.0MHz VDD = 10V , ID = 1A VGEN = 4.5V RL = 10 RGEN = 6 VDS = 10V , ID = 3A,VGS = 4.5V VGS = 0V , IS = 1.7A *1 Min Typ Max Unit 20 V 1A 100 nA 0.45 1 V 30 m 46 550 164 pF 138 10 ns 8.2 ns 25 ns 6.7 ns 6.2 nC 1.8 nC 1.5 nC 1.2 V ■ Marking Marking 8205 2 www.kexin.com.cn .


LM317DY KI8205T KB160M-220


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