2SK2731

SMD Type MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON) ＜ 2.8Ω (VGS = 10V) ● RDS(ON) ＜ 4.5Ω (VGS = 4V) N-Channel MOSFET 2SK2731 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Reverse Continuous Drain Current Reverse Pulsded Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Note.1: PW ≤ 10us, Duty Cycle ≤ 1% ■ Electrical Characteristics Ta = 25℃ Symbol VDS VGS ID IDM IDR IDMR PD TJ Tstg Rating 30 ±20 0.2 0.8 0.2 0.8 200 150 -55 to 150 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cutt-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time ■ Marking Marking KL Symbol VDSS IDSS IGSS VGS(off) RDS(On) gFS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=250μA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±20V VDS=10V , ID=1mA VGS=10V, ID=0.1A VGS=4V, ID=0.1A VDS=10V, ID=0.1A VGS=0V, VDS=10V, f=1MHz VGS=10V, VDS=15V, ID=0.1A,RL=150Ω,RG=10Ω Unit V A mW ℃ Min Typ Max Unit 30 V 10 uA ±10 uA 1 2.5 V 2.8 Ω 4.5 100 mS ...