KO3416

SMD Type N-Channel Enhancement MOSFET AO3416 (KO3416) MOSFET ■ Features ● VDS (V) = 20V ● ID = 6.5 A (VGS = 4.5V) ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) ● RDS(ON) ＜ 26mΩ (VGS = 2.5V) ● RDS(ON) ＜ 34mΩ (VGS = 1.8V) G D S +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient t≤10sec Steady State Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg Rating 20 ±8 6.5 5.2 30 1.4 0.9 90 125 80 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.cn 1 SMD Type MOSFET N-Channel Enhancement MOSFET AO3416 (KO3416) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On-State Drain Current Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charg Maximum Body-Diode Cont...