2SJ207 MOSFET Datasheet

2SJ207 Datasheet, PDF, Equivalent


Part Number

2SJ207

Description

P-Channel MOSFET

Manufacture

Kexin

Total Page 4 Pages
Datasheet
Download 2SJ207 Datasheet


2SJ207
SMD Type
P-Channel MOSFET
2SJ207
MOSFET
Features
VDS (V) =-16V
ID =-1 A (VGS =-10V)
RDS(ON) 1.5Ω (VGS =-4V)
RDS(ON) 4Ω (VGS =-2.5V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Note.1: PW 10 ms, duty cycle 50%
Electrical Characteristics Ta = 25
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
-16
±16
-1
-2
2
150
-55 to 150
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-16V, VGS=0V
VDS=0V, VGS=±16V
VGS=-5V ID=-1mA
VGS=-4V, ID=-0.5 A
VGS=-2.5V, ID=-30mA
VDS=-3V, ID=-0.5A
VGS=0V, VDS=-3V, f=1MHz
VGS(on)=-3V, ID=-0.1A,
RL=30Ω,RG=10 Ω,VDD=-3V,
Marking
Marking
PE
Unit
V
A
W
Min Typ Max Unit
-16 V
-1 uA
±5 uA
-1.4 -2.4 V
1.5
Ω
4
0.4 0.7
S
180
160 pF
50
180
500
ns
130
240
www.kexin.com.cn 1

2SJ207
SMD Type
Typical Characterisitics
P-Channel MOSFET
2SJ207
MOSFET
2 www.kexin.com.cn


Features SMD Type P-Channel MOSFET 2SJ207 MOSFE T ■ Features ● VDS (V) =-16V ● I D =-1 A (VGS =-10V) ● RDS(ON) < 1.5 Ω (VGS =-4V) ● RDS(ON) < 4Ω (VGS =-2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute M aximum Ratings Ta = 25℃ Parameter Dra in-Source Voltage Gate-Source Voltage C ontinuous Drain Current Pulsed Drain Cu rrent (Note.1) Power Dissipation Juncti on Temperature Junction Storage Tempera ture Range Note.1: PW ≤ 10 ms, duty c ycle ≤ 50% ■ Electrical Characteris tics Ta = 25℃ Symbol VDS VGS ID IDM PD TJ Tstg Rating -16 ±16 -1 -2 2 150 -55 to 150 Parameter Drain-Source Bre akdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate to Source Cutoff Voltage Static Drain-S ource On-Resistance Forward Transconduc tance Input Capacitance Output Capacita nce Reverse Transfer Capacitance Turn-O n DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Symbol VD SS IDSS IGSS VGS(off) RDS(On) gFS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=-2.
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