2SK1284-Z

SMD Type N-Channel MOSFET 2SK1284-Z MOSFICET Features Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +1.50 0.15 -0.15 3.80 +5.55 0.15 -0.15 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.252 .6 5 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Pulsed Drain Current * Power dissipation TC=25 TA=25 Junction Temperature Storage temperature * PW 10 us, duty cycle 5% Symbol VDSS VGSS ID IDM PD Tj Tstg Rating 100 20 3 12 20 1 150 -55 to +150 Unit V V A A W W www.kexin.com.cn 1 SMD Type N-Channel MOSFET 2SK1284-Z ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cut-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Diode Forward Voltage Symbol Test Conditions VDSS ID=250μA, VGS=0V IDSS VDS=100V, VGS=0V IGSS VDS=0V, VGS=±10V VGS(off) VDS=10 V ID=1mA...